STD9NM60N
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Specification
Id-连续漏极电流 | 6.5 A |
晶体管极性 | MOSFET |
安装方式 | SMD/SMT |
封装 | TO-252-3 |
电路数量 | 1 Channel |
工作温度范围 | 150°C(TJ) |
Rds On-漏源导通电阻 | 745 mOhms |
Vds-漏源极击穿电压 | 600 V |
Pd-功率耗散 | 70 W |
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