STF10P6F6
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Specification
工作温度范围 | + 175 C |
Rds On-漏源导通电阻 | 160 mOhms |
Vds-漏源极击穿电压 | 60 V |
Qg-栅极电荷 | 6.4 nC |
封装 | TO-220FP-3 |
电路数量 | 1 Channel |
安装方式 | Through Hole |
Vgs - 栅极-源极电压 | 10 V |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 10 A |
Pd-功率耗散 | 20 W |
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