STF9HN65M2
In stock
- STF9HN65M2 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Qg-栅极电荷 | 11.5 nC |
高度 | 4.6 mm |
工作温度范围 | - 55 C~+ 150 C |
Vds-漏源极击穿电压 | 600 V |
Pd-功率耗散 | 20 W |
电路数量 | 1 Channel |
安装方式 | Through Hole |
晶体管极性 | MDmesh M2 |
Rds On-漏源导通电阻 | 820 mOhms |
封装 | TO-220FP |
Id-连续漏极电流 | 5.5 A |
宽度 | 10.4 mm |
长度 | 16.4 mm |
Vgs - 栅极-源极电压 | 25 V |
Others include "STF9HN65M2" parts
The following parts include 'STF9HN65M2'
STF9HN65M2 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
STF9HN65M2
ST Microelectronics
通孔 N 通道 650V 5.5A(Tc) 20W(Tc) TO-220FP
Learn More >
-
- View All Newest Products from Omron