STGP4M65DF2
Manufacturer:
Mfr. Part #:
STGP4M65DF2
Allchips #:
R001-STGP4M65DF2-14-H-0000-X-Y
Description:
IGBT 沟槽型场截止 650V 8A 68W 通孔 TO-220AB
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Specification
集电极—发射极最大电压 VCEO | 650 V |
封装 | TO-220-3 |
集电极电流Ic | 8 A |
栅极/发射极最大电压 | 20 V |
安装方式 | Through Hole |
栅极阈值电压-VGE(th) | 20 V |
Pd-功率耗散 | 68 W |
工作温度范围 | - 55 C~+ 175 C |
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