STGW60H65DFB
In stock
- STGW60H65DFB Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
安装方式 | Through Hole |
集电极—发射极最大电压 VCEO | 650 V |
工作温度范围 | - 55 C~+ 175 C |
集电极电流Ic | 60 A |
Pd-功率耗散 | 375 W |
封装 | TO-247-3 |
栅极阈值电压-VGE(th) | 20 V |
栅极/发射极最大电压 | 20 V |
Others include "STGW60H65DFB" parts
The following parts include 'STGW60H65DFB'
STGW60H65DFB Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
STGW60H65DFB
ST Microelectronics
Trans IGBT Chip N-CH 650V 80A 375W 3-Pin(3+Tab) TO-247 Tube
Learn More >
-
-
-
STGW60H65DFB
ST Microelectronics
Trans IGBT Chip N-CH 650V 80A 375W 3-Pin(3+Tab) TO-247 Tube
Learn More >
-
-
-
STGW60H65DFB
ST Microelectronics
Learn More >
-
-
-
STGW60H65DFB
ST Microelectronics
Learn More >
-
-
-
STGW60H65DFB-4
ST Microelectronics
IGBT
Learn More >
-
- View All Newest Products from Omron