STH110N10F7-2
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Specification
电路数量 | 1 Channel |
Pd-功率耗散 | 150 W |
Qg-栅极电荷 | 60 nC |
工作温度范围 | - 55 C~+ 175 C |
Vgs - 栅极-源极电压 | 20 V |
封装 | H2PAK-2 |
Id-连续漏极电流 | 110 A |
安装方式 | SMD/SMT |
Rds On-漏源导通电阻 | 6.5 mOhms |
晶体管极性 | MOSFET |
Vds-漏源极击穿电压 | 100 V |
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