STH12N120K5-2
In stock
- STH12N120K5-2 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Qg-栅极电荷 | 44.2 nC |
Vds-漏源极击穿电压 | 1.2 kV |
Rds On-漏源导通电阻 | 620 mOhms |
封装 | H2PAK-2 |
Vgs - 栅极-源极电压 | 30 V |
工作温度范围 | - 55 C~+ 150 C |
安装方式 | SMD/SMT |
晶体管极性 | MOSFET |
Pd-功率耗散 | 250 W |
Id-连续漏极电流 | 12 A |
电路数量 | 1 Channel |
Others include "STH12N120K5-2" parts
The following parts include 'STH12N120K5-2'
STH12N120K5-2 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
STH12N120K5-2
ST Microelectronics
Learn More >
-
-
-
STH12N120K5-2
ST Microelectronics
Learn More >
-
-
-
STH12N120K5-2AG
ST Microelectronics
MOSFET Automotive-grade N-channel 1200 V, 1.45 Ohm typ., 7 A MDmesh K5 Power MOSFET
Learn More >
-
- View All Newest Products from Omron