STH15810-2
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Specification
Pd-功率耗散 | 250W(Tc) |
Vds-漏源极击穿电压 | 100V |
Rds On-漏源导通电阻 | 3.9mΩ @ 55A,10V |
封装 | H2PAK-2 |
Id-连续漏极电流 | 110A(Tc) |
晶体管极性 | N沟道 |
Vgs - 栅极-源极电压 | 4.5V @ 250uA |
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STH15810-2
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N沟道,100V,110A,0.0039Ω@10V STH15810-2 停产
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STH15810-2
ST Microelectronics
N沟道,100V,110A,0.0039Ω@10V STH15810-2 停产
Learn More >
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