STH170N8F7-2
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Specification
晶体管极性 | STripFET F7 |
Rds On-漏源导通电阻 | 3.7 mOhms |
高度 | 4.8 mm |
长度 | 15.8 mm |
宽度 | 10.4 mm |
封装 | H2Pak-2 |
工作温度范围 | - 55 C~+ 175 C |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Id-连续漏极电流 | 120 A |
Vgs - 栅极-源极电压 | 20 V |
Vds-漏源极击穿电压 | 80 V |
Qg-栅极电荷 | 120 nC |
Pd-功率耗散 | 250 W |
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