STH180N10F3-2
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Specification
工作温度范围 | -55°C~175°C(TJ) |
Qg-栅极电荷 | 114.6 nC |
Vds-漏源极击穿电压 | 100 V |
Rds On-漏源导通电阻 | 4.5 mOhms |
电路数量 | 1 Channel |
Pd-功率耗散 | 315 W |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 120 A |
Vgs - 栅极-源极电压 | 20 V |
封装 | H2PAK-2 |
安装方式 | SMD/SMT |
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