STH275N8F7-2AG
In stock
- STH275N8F7-2AG Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Qg-栅极电荷 | 193 nC |
晶体管极性 | MOSFET |
Pd-功率耗散 | 315 W |
Vds-漏源极击穿电压 | 80 V |
安装方式 | SMD/SMT |
封装 | H2PAK-2 |
资格等级 | AEC-Q101 |
电路数量 | 1 Channel |
Rds On-漏源导通电阻 | 1.7 mOhms |
Id-连续漏极电流 | 180 A |
Vgs - 栅极-源极电压 | 20 V |
工作温度范围 | - 55 C~+ 175 C |
Others include "STH275N8F7-2AG" parts
The following parts include 'STH275N8F7-2AG'
STH275N8F7-2AG Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
STH275N8F7-2AG
ST Microelectronics
Trans MOSFET N-CH 80V 180A 3-Pin(2+Tab) H2PAK T/R Automotive AEC-Q101
Learn More >
-
-
-
STH275N8F7-2AG
ST Microelectronics
表面贴装型 N 通道 80V 180A(Tc) 315W(Tc) H2Pak-2
Learn More >
-
- View All Newest Products from Omron