STH315N10F7-2
In stock
- STH315N10F7-2 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Pd-功率耗散 | 315 W |
晶体管极性 | MOSFET |
资格等级 | AEC-Q101 |
封装 | H2PAK-2 |
Qg-栅极电荷 | 180 nC |
工作温度范围 | - 55 C~+ 175 C |
Vgs - 栅极-源极电压 | 20 V |
安装方式 | SMD/SMT |
电路数量 | 1 Channel |
Id-连续漏极电流 | 180 A |
Rds On-漏源导通电阻 | 2.3 mOhms |
Vds-漏源极击穿电压 | 100 V |
Others include "STH315N10F7-2" parts
The following parts include 'STH315N10F7-2'
STH315N10F7-2 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
STH315N10F7-2
ST Microelectronics
MOSFET N-CH 100V 180A H2PAK-2
Learn More >
-
-
-
STH315N10F7-6
ST Microelectronics
Learn More >
-
-
-
STH315N10F7-6
ST Microelectronics
Learn More >
-
-
-
STH315N10F7-6
ST Microelectronics
Learn More >
-
-
-
STH315N10F7-6
ST Microelectronics
Learn More >
-
-
-
STH315N10F7-2
ST Microelectronics
MOSFET N-CH 100V 180A H2PAK-2
Learn More >
-
- View All Newest Products from Omron