STL115N10F7AG
In stock
- STL115N10F7AG Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Pd-功率耗散 | 136 W |
Vgs - 栅极-源极电压 | 20 V |
资格等级 | AEC-Q101 |
工作温度范围 | - 55 C~+ 175 C |
晶体管极性 | MOSFET |
封装 | PowerFLAT-8 |
Vds-漏源极击穿电压 | 100 V |
Qg-栅极电荷 | 72.5 nC |
Id-连续漏极电流 | 107 A |
安装方式 | SMD/SMT |
电路数量 | 1 Channel |
Rds On-漏源导通电阻 | 5 mOhms |
Others include "STL115N10F7AG" parts
The following parts include 'STL115N10F7AG'
STL115N10F7AG Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
STL115N10F7AG
ST Microelectronics
MOSFET Automotive-grade N-channel 100 V, 0.005 Ohm typ., 107 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
Learn More >
-
-
-
STL115N10F7AG
Analog Devices Inc
Learn More >
-
-
-
STL115N10F7AG
ST Microelectronics
MOSFET N-CH 100V 107A POWERFLAT
Learn More >
-
- View All Newest Products from Omron