STL15DN4F5
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Specification
晶体管极性 | MOSFET |
Vds-漏源极击穿电压 | 40 V |
Vgs - 栅极-源极电压 | 20 V |
Id-连续漏极电流 | 60 A |
Pd-功率耗散 | 60 W |
工作温度范围 | + 175 C |
安装方式 | SMD/SMT |
Rds On-漏源导通电阻 | 9 mOhms |
资格等级 | AEC-Q101 |
电路数量 | 2 Channel |
封装 | PowerFLAT-5x6-8 |
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