STL23NM50N
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Specification
Pd-功率耗散 | 3 W |
封装 | PowerFLAT-8x8-HV-5 |
Qg-栅极电荷 | 45 nC |
电路数量 | 1 Channel |
Vgs - 栅极-源极电压 | 25 V |
Vds-漏源极击穿电压 | 550 V |
Rds On-漏源导通电阻 | 210 mOhms |
安装方式 | SMD/SMT |
工作温度范围 | + 150 C |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 14 A |
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