STL50DN6F7
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Specification
晶体管极性 | MOSFET |
Qg-栅极电荷 | 17 nC |
Rds On-漏源导通电阻 | 11 mOhms |
电路数量 | 2 Channel |
安装方式 | SMD/SMT |
Pd-功率耗散 | 62.5 W |
Id-连续漏极电流 | 57 A |
工作温度范围 | - 55 C~+ 175 C |
Vgs - 栅极-源极电压 | 20 V |
Vds-漏源极击穿电压 | 60 V |
封装 | PowerFLAT-5x6-8 |
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STL50DN6F7
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MOSFET - 阵列 2 N-通道(双) 60V 57A(Tc) 表面贴装型 PowerFlat™(5x6)
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