STL58N3LLH5
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Specification
Id-连续漏极电流 | 56 A |
Qg-栅极电荷 | 6.5 nC |
高度 | 1 mm |
Pd-功率耗散 | 62.5 W |
Vds-漏源极击穿电压 | 30 V |
晶体管极性 | STripFET H5 |
封装 | PowerFLAT-5x6-8 |
工作温度范围 | - 55 C~+ 175 C |
Vgs - 栅极-源极电压 | 22 V, - 20 V |
长度 | 6.6 mm |
宽度 | 5.4 mm |
Rds On-漏源导通电阻 | 9 mOhms |
资格等级 | AEC-Q101 |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
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