STL60N10F7
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Specification
封装 | PowerFLAT-5x6-8 |
工作温度范围 | - 55 C~+ 175 C |
Pd-功率耗散 | 5 W |
Vds-漏源极击穿电压 | 100 V |
晶体管极性 | MOSFET |
安装方式 | SMD/SMT |
Id-连续漏极电流 | 12 A |
Qg-栅极电荷 | 25 nC |
Rds On-漏源导通电阻 | 16.5 mOhms |
电路数量 | 1 Channel |
Vgs - 栅极-源极电压 | 20 V |
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