STL7N10F7
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Specification
Vds-漏源极击穿电压 | 100 V |
工作温度范围 | - 55 C~+ 150 C |
电路数量 | 1 Channel |
Id-连续漏极电流 | 7 A |
Pd-功率耗散 | 2.9 W |
Rds On-漏源导通电阻 | 35 mOhms |
晶体管极性 | MOSFET |
Qg-栅极电荷 | 14 nC |
Vgs - 栅极-源极电压 | 20 V |
安装方式 | SMD/SMT |
封装 | PowerFLAT-3.3x3.3-8 |
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