STL7N60M2
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Specification
工作温度范围 | + 150 C |
Rds On-漏源导通电阻 | 1.05 Ohms |
晶体管极性 | MOSFET |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Pd-功率耗散 | 67 W |
Qg-栅极电荷 | 8.8 nC |
封装 | PowerFLAT-5x5-12 |
Vds-漏源极击穿电压 | 600 V |
Vgs - 栅极-源极电压 | 25 V |
Id-连续漏极电流 | 5 A |
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