STN1NF20
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Specification
工作温度范围 | - 55 C~+ 150 C |
Vds-漏源极击穿电压 | 200 V |
Pd-功率耗散 | 2 W |
Vgs - 栅极-源极电压 | 10 V |
电路数量 | 1 Channel |
晶体管极性 | MOSFET |
安装方式 | SMD/SMT |
Rds On-漏源导通电阻 | 1.5 Ohms |
Qg-栅极电荷 | 5.7 nC |
Id-连续漏极电流 | 1 A |
封装 | SOT-223-4 |
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