STP100N6F7
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Specification
Rds On-漏源导通电阻 | 5.6 mOhms |
Pd-功率耗散 | 125 W |
晶体管极性 | MOSFET |
Vds-漏源极击穿电压 | 60 V |
封装 | TO-220-3 |
Vgs - 栅极-源极电压 | 10 V |
工作温度范围 | - 55 C~+ 175 C |
电路数量 | 1 Channel |
安装方式 | Through Hole |
Qg-栅极电荷 | 30 nC |
Id-连续漏极电流 | 100 A |
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