STP11NM80
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Specification
Rds On-漏源导通电阻 | 400 mOhms |
Id-连续漏极电流 | 11 A |
Vgs - 栅极-源极电压 | 30 V |
Vds-漏源极击穿电压 | 800 V |
长度 | 10.4 mm |
宽度 | 4.6 mm |
Pd-功率耗散 | 150 W |
封装 | TO-220 |
安装方式 | Through Hole |
电路数量 | 1 Channel |
高度 | 9.15 mm |
晶体管极性 | MOSFET |
工作温度范围 | - 65 C~+ 150 C |
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