STP18N65M2
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Specification
Vds-漏源极击穿电压 | 650 V |
Rds On-漏源导通电阻 | 275 mOhms |
封装 | TO-220-3 |
Pd-功率耗散 | 110 W |
Qg-栅极电荷 | 20 nC |
电路数量 | 1 Channel |
安装方式 | Through Hole |
Vgs - 栅极-源极电压 | 25 V |
Id-连续漏极电流 | 12 A |
工作温度范围 | + 150 C |
晶体管极性 | MOSFET |
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