STP5N60M2
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Specification
晶体管极性 | MOSFET |
Vgs - 栅极-源极电压 | 25 V |
Qg-栅极电荷 | 4.5 nC |
电路数量 | 1 Channel |
工作温度范围 | 150°C(TJ) |
Pd-功率耗散 | 45 W |
Rds On-漏源导通电阻 | 1.26 Ohms |
Id-连续漏极电流 | 3.7 A |
封装 | TO-220-3 |
安装方式 | Through Hole |
Vds-漏源极击穿电压 | 600 V |
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