STP8NK100Z
In stock
- STP8NK100Z Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Rds On-漏源导通电阻 | 1.85 Ohms |
Vds-漏源极击穿电压 | 1 kV |
工作温度范围 | - 55 C~+ 150 C |
安装方式 | Through Hole |
晶体管极性 | MOSFET |
Qg-栅极电荷 | 73 nC |
高度 | 9.15 mm |
封装 | TO-220-3 |
Pd-功率耗散 | 160 W |
Id-连续漏极电流 | 6.5 A |
长度 | 10.4 mm |
宽度 | 4.6 mm |
电路数量 | 1 Channel |
Vgs - 栅极-源极电压 | 10 V |
Others include "STP8NK100Z" parts
The following parts include 'STP8NK100Z'
STP8NK100Z Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
STP8NK100Z
ST Microelectronics
N沟道 1000V 6.5A
Learn More >
-
-
-
STP8NK100Z
ST Microelectronics
N沟道 1000V 6.5A
Learn More >
-
- View All Newest Products from Omron