STQ1NC45R-AP
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Specification
Pd-功率耗散 | 3.1 W |
Rds On-漏源导通电阻 | 4.5 Ohms |
Id-连续漏极电流 | 500 mA |
电路数量 | 1 Channel |
工作温度范围 | - 65 C~+ 150 C |
封装 | TO-92-3 |
晶体管极性 | MOSFET |
Vgs - 栅极-源极电压 | 30 V |
Vds-漏源极击穿电压 | 450 V |
安装方式 | Through Hole |
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