STQ1NK60ZR-AP
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Specification
Vds-漏源极击穿电压 | 600 V |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 300 mA |
Vgs - 栅极-源极电压 | 10 V |
工作温度范围 | - 55 C~+ 150 C |
Qg-栅极电荷 | 4.9 nC |
Rds On-漏源导通电阻 | 15 Ohms |
电路数量 | 1 Channel |
安装方式 | Through Hole |
Pd-功率耗散 | 3 W |
封装 | TO-92-3 |
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