STQ1NK80ZR-AP
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Specification
Pd-功率耗散 | 3 W |
安装方式 | Through Hole |
Vgs - 栅极-源极电压 | 30 V |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 300 mA |
工作温度范围 | - 55 C~+ 150 C |
封装 | TO-92-3 |
Rds On-漏源导通电阻 | 16 Ohms |
Vds-漏源极击穿电压 | 800 V |
长度 | 4.95 mm |
宽度 | 3.94 mm |
高度 | 4.95 mm |
电路数量 | 1 Channel |
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