STS10DN3LH5
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Specification
Pd-功率耗散 | 2.5 W |
电路数量 | 2 Channel |
Id-连续漏极电流 | 10 A |
Vds-漏源极击穿电压 | 30 V |
安装方式 | SMD/SMT |
工作温度范围 | -55°C~150°C(TJ) |
Rds On-漏源导通电阻 | 21 mOhms |
封装 | SOIC-8 |
晶体管极性 | MOSFET |
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STS10DN3LH5
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