STS10P4LLF6
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Specification
Rds On-漏源导通电阻 | 12.5 mOhms |
封装 | SOIC-8 |
Vgs - 栅极-源极电压 | 20 V |
Pd-功率耗散 | 2.7 W |
工作温度范围 | + 150 C |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 10 A |
Qg-栅极电荷 | 34 nC |
Vds-漏源极击穿电压 | 40 V |
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