STS4DNF60L
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Specification
电路数量 | 2 Channel |
长度 | 5 mm |
Qg-栅极电荷 | 15 nC |
高度 | 1.65 mm |
晶体管极性 | Power MOSFET |
宽度 | 4 mm |
Id-连续漏极电流 | 4 A |
封装 | SO-8 |
Pd-功率耗散 | 2 W |
Vds-漏源极击穿电压 | 60 V |
安装方式 | SMD/SMT |
Rds On-漏源导通电阻 | 55 mOhms |
工作温度范围 | - 55 C~+ 150 C |
Vgs - 栅极-源极电压 | 10 V |
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