STT5N2VH5
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Specification
工作温度范围 | - 55 C~+ 150 C |
安装方式 | SMD/SMT |
封装 | SOT-23-6 |
Pd-功率耗散 | 1.6 W |
Qg-栅极电荷 | 6 nC |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 5 A |
Vgs - 栅极-源极电压 | 8 V |
Rds On-漏源导通电阻 | 31 mOhms |
Vds-漏源极击穿电压 | 20 V |
电路数量 | 1 Channel |
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