STT6N3LLH6
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Specification
Vgs - 栅极-源极电压 | 10 V |
Vds-漏源极击穿电压 | 30 V |
工作温度范围 | + 150 C |
晶体管极性 | MOSFET |
Qg-栅极电荷 | 3.6 nC |
Id-连续漏极电流 | 6 A |
封装 | SOT-23-6 |
Pd-功率耗散 | 1.6 W |
安装方式 | SMD/SMT |
电路数量 | 1 Channel |
Rds On-漏源导通电阻 | 25 mOhms |
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