STW18NM60N
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Specification
Rds On-漏源导通电阻 | 260 mOhms |
电路数量 | 1 Channel |
晶体管极性 | MOSFET |
封装 | TO-247-3 |
Vds-漏源极击穿电压 | 600 V |
Pd-功率耗散 | 110W(Tc) |
工作温度范围 | -55°C~150°C(TJ) |
Id-连续漏极电流 | 13 A |
安装方式 | Through Hole |
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STW18NM60ND
ST Microelectronics
通孔 N 通道 600V 13A(Tc) 110W(Tc) TO-247
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