STW28N65M2
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Specification
Vgs - 栅极-源极电压 | 10 V |
Rds On-漏源导通电阻 | 180 mOhms |
Qg-栅极电荷 | 35 nC |
晶体管极性 | MOSFET |
封装 | TO-247-3 |
Vds-漏源极击穿电压 | 650 V |
电路数量 | 1 Channel |
安装方式 | Through Hole |
Pd-功率耗散 | 170 W |
Id-连续漏极电流 | 20 A |
工作温度范围 | + 150 C |
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STW28N65M2
ST Microelectronics
N沟道,650V,20A,0.18Ω@10V
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