STW32NM50N
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Specification
Qg-栅极电荷 | 62.5 nC |
Vds-漏源极击穿电压 | 500 V |
Rds On-漏源导通电阻 | 130 mOhms |
Vgs - 栅极-源极电压 | 25 V |
Pd-功率耗散 | 190 W |
晶体管极性 | MOSFET |
安装方式 | Through Hole |
封装 | TO-247-3 |
电路数量 | 1 Channel |
工作温度范围 | 150°C(TJ) |
Id-连续漏极电流 | 13.86 A |
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