STW33N60M6
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Specification
晶体管极性 | MOSFET |
Id-连续漏极电流 | 26 A |
电路数量 | 1 Channel |
Vds-漏源极击穿电压 | 600 V |
封装 | TO-247-3 |
安装方式 | Through Hole |
Rds On-漏源导通电阻 | 125 mOhms |
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