STW38N65M5
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Specification
电路数量 | 1 Channel |
工作温度范围 | - 55 C~+ 150 C |
Qg-栅极电荷 | 71 nC |
Pd-功率耗散 | 190 W |
晶体管极性 | MOSFET |
安装方式 | Through Hole |
Vgs - 栅极-源极电压 | 25 V |
Id-连续漏极电流 | 30 A |
封装 | TO-247-3 |
Vds-漏源极击穿电压 | 650 V |
Rds On-漏源导通电阻 | 95 mOhms |
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