STW3N150
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Specification
安装方式 | Through Hole |
工作温度范围 | + 150 C |
晶体管极性 | MOSFET |
Vgs - 栅极-源极电压 | 10 V |
Pd-功率耗散 | 140 W |
Vds-漏源极击穿电压 | 1.5 kV |
Id-连续漏极电流 | 2.5 A |
电路数量 | 1 Channel |
Rds On-漏源导通电阻 | 9 Ohms |
长度 | 15.75 mm |
宽度 | 5.15 mm |
封装 | TO-247-3 |
Qg-栅极电荷 | 29.3 nC |
高度 | 20.15 mm |
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