STW48N60M2
In stock
- STW48N60M2 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Pd-功率耗散 | 300 W |
晶体管极性 | MOSFET |
Qg-栅极电荷 | 70 nC |
Vgs - 栅极-源极电压 | 25 V |
工作温度范围 | - 55 C~+ 150 C |
Vds-漏源极击穿电压 | 600 V |
Rds On-漏源导通电阻 | 70 mOhms |
封装 | TO-247-3 |
电路数量 | 1 Channel |
安装方式 | Through Hole |
Id-连续漏极电流 | 42 A |
Others include "STW48N60M2" parts
The following parts include 'STW48N60M2'
STW48N60M2 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
STW48N60M6
ST Microelectronics
Learn More >
-
-
-
STW48N60M2
ST Microelectronics
N沟道,600V,42A,70mAat10V
Learn More >
-
-
-
STW48N60M2
ST Microelectronics
N沟道,600V,42A,70mAat10V
Learn More >
-
-
-
STW48N60M2
ST Microelectronics
N沟道,600V,42A,70mAat10V
Learn More >
-
-
-
STW48N60M2
ST Microelectronics
Trans MOSFET N-CH 600V 42A 3-Pin(3+Tab) TO-247 Tube
Learn More >
-
-
-
STW48N60M2-4
ST Microelectronics
Learn More >
-
-
-
STW48N60M6-4
ST Microelectronics
N-CHANNEL 600 V, 61 MOHM TYP., 3
Learn More >
-
- View All Newest Products from Omron