STW50N65DM2AG
Manufacturer:
Mfr. Part #:
STW50N65DM2AG
Allchips #:
R001-STW50N65DM2AG-14-H-0000-X-Y
Description:
N沟道,650V,38A,0.07Ω@10V
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Specification
Vds-漏源极击穿电压 | 650V |
封装 | TO-247 |
Vgs - 栅极-源极电压 | 5V @ 250uA |
Rds On-漏源导通电阻 | 87mΩ @ 19A,10V |
安装方式 | 通孔 |
工作温度范围 | -55°C~150°C(TJ) |
Pd-功率耗散 | 300W(Tc) |
Id-连续漏极电流 | 28A(Tc) |
晶体管极性 | 分立半导体产品,晶体管-FET,MOSFET-单个 |
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