STW55NM60ND
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Specification
电路数量 | 1 Channel |
Pd-功率耗散 | 350 W |
Rds On-漏源导通电阻 | 60 mOhms |
Vgs - 栅极-源极电压 | 25 V |
Id-连续漏极电流 | 51 A |
高度 | 20.15 mm |
工作温度范围 | - 55 C~+ 150 C |
Vds-漏源极击穿电压 | 600 V |
封装 | TO-247-3 |
晶体管极性 | MOSFET |
长度 | 15.75 mm |
宽度 | 5.15 mm |
安装方式 | Through Hole |
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