STW56N65M2
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Specification
Qg-栅极电荷 | 93 nC |
Id-连续漏极电流 | 49 A |
Vgs - 栅极-源极电压 | 25 V |
晶体管极性 | MOSFET |
封装 | TO-247-3 |
Rds On-漏源导通电阻 | 49 mOhms |
工作温度范围 | + 150 C |
电路数量 | 1 Channel |
安装方式 | Through Hole |
Pd-功率耗散 | 358 W |
Vds-漏源极击穿电压 | 650 V |
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STW56N65M2
ST Microelectronics
通孔 N 通道 650V 49A(Tc) 358W(Tc) TO-247
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