STW57N65M5
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Specification
Vds-漏源极击穿电压 | 650 V |
Rds On-漏源导通电阻 | 63 mOhms |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 42 A |
封装 | TO-247-3 |
工作温度范围 | 150°C(TJ) |
安装方式 | Through Hole |
Pd-功率耗散 | 250 W |
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STW57N65M5
ST Microelectronics
通孔 N 通道 650V 42A(Tc) 250W(Tc) TO-247
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