STW9N150
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Specification
Id-连续漏极电流 | 8A(Tc) |
Pd-功率耗散 | 320W(Tc) |
Rds On-漏源导通电阻 | 2.5Ω @ 4A,10V |
晶体管极性 | 分立半导体产品,晶体管-FET,MOSFET-单个 |
Vds-漏源极击穿电压 | 1500V |
Vgs - 栅极-源极电压 | 5V @ 250uA |
安装方式 | 通孔 |
工作温度范围 | -55°C~150°C(TJ) |
封装 | TO-247-3 |
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