CSD17309Q3
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Specification
Qg-栅极电荷 | 7.5 nC |
高度 | 1 mm |
晶体管极性 | Power MOSFET |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Id-连续漏极电流 | 60 A |
工作温度范围 | - 55 C~+ 150 C |
Pd-功率耗散 | 2.8 W |
长度 | 3.3 mm |
宽度 | 3.3 mm |
封装 | VSON-CLIP-8 |
Vgs - 栅极-源极电压 | 8 V |
Rds On-漏源导通电阻 | 5.4 mOhms |
Vds-漏源极击穿电压 | 30 V |
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