CSD17381F4
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Specification
晶体管极性 | MOSFET |
长度 | 1 mm |
宽度 | 0.64 mm |
Id-连续漏极电流 | 3.1 A |
电路数量 | 1 Channel |
封装 | PICOSTAR-3 |
Qg-栅极电荷 | 1.04 nC |
高度 | 0.35 mm |
Vgs - 栅极-源极电压 | 8 V |
安装方式 | SMD/SMT |
Pd-功率耗散 | 500 mW |
Vds-漏源极击穿电压 | 30 V |
Rds On-漏源导通电阻 | 109 mOhms |
工作温度范围 | - 55 C~+ 150 C |
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