CSD17506Q5A
In stock
- CSD17506Q5A Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
封装 | VSONP-8 |
Qg-栅极电荷 | 8.3 nC |
高度 | 1 mm |
Vds-漏源极击穿电压 | 30 V |
Pd-功率耗散 | 3.2 W |
工作温度范围 | - 55 C~+ 150 C |
Rds On-漏源导通电阻 | 4 mOhms |
长度 | 6 mm |
宽度 | 4.9 mm |
安装方式 | SMD/SMT |
Id-连续漏极电流 | 100 A |
Vgs - 栅极-源极电压 | 10 V |
晶体管极性 | Power MOSFET |
电路数量 | 1 Channel |
Others include "CSD17506Q5A" parts
The following parts include 'CSD17506Q5A'
CSD17506Q5A Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
CSD17506Q5A
TI
30V N 通道 NexFET™ 功率 MOSFET,Vgs 为 20V
Learn More >
-
-
-
CSD17506Q5A
TI
Trans MOSFET N-CH 30V 23A 8-Pin VSONP EP T/R
Learn More >
-
-
-
CSD17506Q5A
TI
30V N 通道 NexFET™ 功率 MOSFET,Vgs 为 20V
Learn More >
-
- View All Newest Products from Omron