CSD17507Q5AT
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Specification
工作温度范围 | - 55 C~+ 150 C |
Pd-功率耗散 | 39 W |
Vds-漏源极击穿电压 | 30 V |
安装方式 | SMD/SMT |
封装 | VSONP-8 |
电路数量 | 1 Channel |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 65 A |
Vgs - 栅极-源极电压 | - 20 V, + 20 V |
Rds On-漏源导通电阻 | 10.8 mOhms |
Qg-栅极电荷 | 2.8 nC |
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